An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors

Literals

• dcterms:contributor
  • Oriols X.
• dcterms:creator
  • Oriols X.
• ou:vecesCitado
  • 23
• vivo:identifier
  • 2007-308
• ou:eid
  • 2-s2.0-33847260243
• bibo:doi
  • 10.1016/j.sse.2007.01.011
• fabio:hasPublicationYear
  • 2007
• bibo:issn
  • 0038-1101
• bibo:page_range
  • 306-319
• dcterms:publisher
  • Solid-State Electronics
• ou:tipoPublicacion
  • Article
• dcterms:title
  • An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors
• vcard:url
  • https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847260243&origin=inward
• ou:urlScopus
  • https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847260243&origin=inward
• bibo:volume
  • 51

Typed Literals

• dcterms:created
  • 2007-02-01T00:00:00 (xsd:dateTime)

Inverse Relations

• Has related: ou:tienePublicacion
  • ALFREDO ÁLVAREZ GARCÍA