Si+ ion implantation reduces the bacterial accumulation on the Ti6Al4V surface

Literals

ou:eid
- 2-s2.0-79952393274
vivo:identifier
- 2010-86
ou:bibtex
- @article { gonzlezmartn2010,title = {Si+ ion implantation reduces the bacterial accumulation on the Ti6Al4V surface},journal = {Journal of Physics: Conference Series},year = {2010},volume = {252},number = {1},author = {Gallardo-Moreno, A.M. and Pacha-Olivenza, M.A. and Perera-Núñez, J. and González-Carrasco, J.L. and González-Martín, M.L.}}
bibo:doi
- 10.1088/1742-6596/252/1/012017
bibo:eissn
- 1742-6596
fabio:hasPublicationYear
- 2010
dcterms:creator
- Gallardo-Moreno A.M.
dcterms:contributor
- Gallardo-Moreno, A.M., Pacha-Olivenza, M.A., Perera-Núñez, J., González-Carrasco, J.L., González-Martín, M.L.
bibo:issn
- 1742-6588
dcterms:publisher
- Journal of Physics: Conference Series
ou:tipoPublicacion
- Conference Paper
dcterms:title
- Si+ ion implantation reduces the bacterial accumulation on the Ti6Al4V surface
vcard:url
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79952393274&origin=inward
ou:urlOrcid
- http://www.scopus.com/inward/record.url?eid=2-s2.0-79952393274&partnerID=MN8TOARS
ou:urlScopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79952393274&origin=inward
ou:vecesCitado
- 0
bibo:volume
- 252