A 280 GHz stacked-FET power amplifier cell using 50 nm metamorphic HEMT technology

Literals

• vivo:identifier
  • 2016-826
• bibo:isbn
  • 9782874870446
• dcterms:contributor
  • Amado-Rey B.
• bibo:doi
  • 10.1109/eumic.2016.7777522
• fabio:hasPublicationYear
  • 2016
• ou:eid
  • 2-s2.0-85010280510
• dcterms:creator
  • Amado-Rey B.
• bibo:page_range
  • 189-192
• dcterms:publisher
  • EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
• ou:tipoPublicacion
  • Conference Paper
• dcterms:title
  • A 280 GHz stacked-FET power amplifier cell using 50 nm metamorphic HEMT technology
• vcard:url
  • https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85010280510&origin=inward
• ou:urlScopus
  • https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85010280510&origin=inward
• ou:vecesCitado
  • 4

Typed Literals

• dcterms:created
  • 2016-12-07T00:00:00 (xsd:dateTime)

Inverse Relations

• Has related: ou:tienePublicacion
  • YOLANDA CAMPOS ROCA