PUBLICACIÓN
Accurate HEMT model extraction and validation in class A and B bias points using a full two-port large signal on-wafer measurement system
ACCEDER A LA PUBLICACIÓN:
Curras-Francos, MC; Tasker, PJ; Fernandez-Barciela, M; OKeefe, SS; Sanchez, E; Campos-Roca, Y; Edwards, GD; Phillips, WA; IEEE
1998 1998 Ursi Symposium on Signals, Systems, and Electr Onics
DOI
10.1109/issse.1998.738110
BIBTEX
@article{RID:0629170601768-13, title = {Accurate HEMT model extraction and validation in class A and B bias points using a full two-port large signal on-wafer measurement system}, journal = {1998 Ursi Symposium on Signals, Systems, and Electr Onics}, year = {1998}, author = {Curras-Francos, MC and Tasker, PJ and Fernandez-Barciela, M and O'Keefe, SS and Sanchez, E and Campos-Roca, Y and Edwards, GD and Phillips, WA and IEEE}, pages = {427-431} }
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