PUBLICACIÓN

ACCEDER A LA PUBLICACIÓN: Scopus Orcid Dialnet

Electrical and Electronic Engineering (Q1), Instrumentation (Q1)

JCR: 3.301

SJR: 0.681

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Comparative Study Of Cmos Lock-In Amplifiers For Wideband Bioelectrical Impedance Measurements
A 4.2–13.2 V, On-Chip, Regulated, Dc–dc Converter In A Standard 1.8v/3.3v Cmos Process
A High-Voltage Floating Level Shifter For A Multi-Stage Charge-Pump In A Standard 1.8 V/3.3 V Cmos Process
A 4.2–13.2 V, On-Chip, Regulated, Dc–dc Converter In A Standard 1.8v/3.3v Cmos Process
A High-Voltage Floating Level Shifter For A Multi-Stage Charge-Pump In A Standard 1.8 V/3.3 V Cmos Process
A Fully Integrated, Power-Efficient, 0.07–2.08 Ma, High-Voltage Neural Stimulator In A Standard Cmos Process
A High-Voltage Floating Level Shifter For A Multi-Stage Charge-Pump In A Standard 1.8 V/3.3 V Cmos Process
A Fully Integrated, Power-Efficient, 0.07–2.08 Ma, High-Voltage Neural Stimulator In A Standard Cmos Process
Experimental Validation Of A High-Voltage Compliant Neural Stimulator Implemented In A Standard 1.8v/3.3v Cmos Process
A Fully Integrated, Power-Efficient, 0.07–2.08 Ma, High-Voltage Neural Stimulator In A Standard Cmos Process
Experimental Validation Of A High-Voltage Compliant Neural Stimulator Implemented In A Standard 1.8v/3.3v Cmos Process
Electrical Model Of A Wireless Mw-Power And Mbps-Data Transfer System Over A Single Pair Of Coils
Experimental Validation Of A High-Voltage Compliant Neural Stimulator Implemented In A Standard 1.8v/3.3v Cmos Process
Electrical Model Of A Wireless Mw-Power And Mbps-Data Transfer System Over A Single Pair Of Coils
A Wide-Range, High-Voltage, Floating Level Shifter With Charge Refreshing In A Standard 180 Nm Cmos Process
Electrical Model Of A Wireless Mw-Power And Mbps-Data Transfer System Over A Single Pair Of Coils
A Wide-Range, High-Voltage, Floating Level Shifter With Charge Refreshing In A Standard 180 Nm Cmos Process
A Comparative Study Of Stacked-Diode Configurations Operating In The Photovoltaic Region
A Wide-Range, High-Voltage, Floating Level Shifter With Charge Refreshing In A Standard 180 Nm Cmos Process
A Comparative Study Of Stacked-Diode Configurations Operating In The Photovoltaic Region
Voice-Controlled Assistance Device For Victims Of Gender-Based Violence
A Comparative Study Of Stacked-Diode Configurations Operating In The Photovoltaic Region
Voice-Controlled Assistance Device For Victims Of Gender-Based Violence
Comparative Study Of Cmos Lock-In Amplifiers For Wideband Bioelectrical Impedance Measurements
Voice-Controlled Assistance Device For Victims Of Gender-Based Violence
Comparative Study Of Cmos Lock-In Amplifiers For Wideband Bioelectrical Impedance Measurements
Design Of Robust Pseudo-Resistors With Optimized Frequency Response
Comparative Study Of Cmos Lock-In Amplifiers For Wideband Bioelectrical Impedance Measurements
Design Of Robust Pseudo-Resistors With Optimized Frequency Response
Comparative Study Of Cmos Lock-In Amplifiers For Wideband Bioelectrical Impedance Measurements
Design Of Robust Pseudo-Resistors With Optimized Frequency Response
Comparative Study Of Cmos Lock-In Amplifiers For Wideband Bioelectrical Impedance Measurements
A 4.2–13.2 V, On-Chip, Regulated, Dc–dc Converter In A Standard 1.8v/3.3v Cmos Process
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