PUBLICACIÓN

An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors

ACCEDER A LA PUBLICACIÓN: Scopus

2007 Solid-State Electronics


CITAS

23

DOI

10.1016/j.sse.2007.01.011

EID

2-s2.0-33847260243

ISSN

0038-1101


AUTORES DE LA UEX